BYS11-90-M3 www.vishay.com vishay general semiconductor reivision: 09-dec-13 1 document number: 89409 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount schottky barrier rectifier features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? very low switching losses ? high surge capability ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in high frequency inverters, switching power supplies, freewheeling diodes, oring diode, dc/dc converters and reverse battery protection. mechanical data case: do-214ac (sma) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.5 a v rrm 90 v i fsm 40 a v f 0.75 v t j max. 150 c package do-214ac (sma) diode variation single die do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol bys11-90 unit device marking code bys109 maximum repetitive peak reverse voltage v rrm 90 v maximum average forward rectified current i f(av) 1.5 a peak forward surge current single half sine-wave superimposed on rated load 8.3 ms i fsm 40 a 10 ms 30 voltage rate of change (rated v r ) dv/dt 10 000 v/s junction and storage temperature range t j , t stg -55 to +150 c
BYS11-90-M3 www.vishay.com vishay general semiconductor reivision: 09-dec-13 2 document number: 89409 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse test: 300 s pulse width, 1 % duty cycle notes (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current vs. forward voltage fig. 2 - max. average forward current vs. ambient temperature electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol bys11-90 unit maximum instantaneous forward voltage 1.0 a v f (1) 750 mv maximum dc reverse current v rrm t j = 25 c i r (1) 100 a t j = 100 c 1 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol bys11-90 unit maximum thermal resistan ce, junction to lead r ? jl 25 c/w maximum thermal resistance , junction to ambient r ? ja (1) 150 c/w r ? ja (2) 125 r ? ja (3) 100 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode BYS11-90-M3/tr 0.064 tr 1800 7" diam eter plastic tape and reel BYS11-90-M3/tr3 0.064 tr3 7500 13" di ameter plastic tape and reel 10 1 0.1 0.01 0.001 t j = 150 c t j = 25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 forward voltage (v) forward current (a) 0 40 80 120 160 200 2.0 1.6 1.2 0.8 0.4 0 v r = v rrm , half sine-wave, r thja = 25 k/w ambient temperature (c) average forward cu rrent (a)
BYS11-90-M3 www.vishay.com vishay general semiconductor reivision: 09-dec-13 3 document number: 89409 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - max. average forward current vs. ambient temperature fig. 4 - reverse current vs. junction temperature fig. 5 - max. reverse power diss ipation vs. junction temperature fig. 6 - diode capacitance vs. reverse voltage package outline dimensions in inches (millimeters) v r = 0 v, half sine-wave r thja = 25 k/w 100 k/w 125 k/w 150 k/w 0 40 80 120 160 200 2.0 1.6 1.2 0.8 0.4 0 ambient temperature (c) average forward cu rrent (a) v r = v rrm 0 40 80 120 160 200 1000 100 10 1 0.1 junction temperatu re (c) reverse current (ma) r thja = 25 k/w 100 k/w v r = v rrm 0 40 80 120 100 200 2.0 1.6 1.2 0.8 0.4 0 max. reverse power dissipation (w) junction temperature (c) f = 1 mhz 0.1 1 10 100 reverse voltage (v) 180 160 140 120 100 80 60 40 20 0 diode capacitance (pf) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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